EIC4450-10
UPDATED 07/25/2007
4.40-5.00 GHz 10-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
•
4.40–5.00GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 29.5 dBm SCL
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 4.40-5.00GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain at 1dB Compression
f = 4.40-5.00GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain Flatness
f = 4.40-5.00GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
3200mA
f = 4.40-5.00GHz
Drain Current at 1dB Compression
f = 4.40-5.00GHz
-43
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 5.00GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 60 mA
MIN
39.5
9.0
TYP
40.5
10.0
MAX
UNITS
dBm
dB
±0.6
35
3300
-46
5800
-2.5
2.5
6400
-4.0
3.0
o
dB
%
3800
mA
dBc
mA
V
C/W
Note: 1. Tested with 50 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
CONTINUOUS
2
10V
-4.5V
Idss
120mA
@ 3dB Compression
150
o
C
-65 to +150
o
C
42W
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised July 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
