EIC4450-15 参数 Datasheet PDF下载

EIC4450-15

ISSUED: 03/30/2009

4.40-5.00GHz 15-Watt Internally Matched Power FET

2X 0.079 MIN

4X 0.102

FEATURES

•

•

•

•

•

•

•

•

4.40– 5.00GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+42 dBm Output Power at 1dB Compression

10.5 dB Power Gain at 1dB Compression

31% Power Added Efficiency

-46 dBc IM3 at Po = 31 dBm SCL

Hermetic Metal Flange Package

100% Tested for DC, RF, and R

TH

0.945

0.803

Excelics

EIC4450-15

0.024

0.580

YYWW

SN

0.315

0.685

0.010

0.158

0.617

0.004

0.055

0.095

0.055

0.168

ELECTRICAL CHARACTERISTICS (T

a

= 25°C)

SYMBOL

P

1dB

G

1dB

∆G

PAE

Id

1dB

IM3

I

DSS

V

P

R

TH

PARAMETERS/TEST CONDITIONS

1

Output Power at 1dB Compression

f = 4.40-5.00GHz

V

DS

= 10 V, I

DSQ

≈

4500mA

Gain at 1dB Compression

f = 4.40-5.00GHz

V

DS

= 10 V, I

DSQ

≈

4500mA

Gain Flatness

f = 4.40-5.00GHz

V

DS

= 10 V, I

DSQ

≈

4500mA

Power Added Efficiency at 1dB Compression

f = 4.40-5.00GHz

V

DS

= 10 V, I

DSQ

≈

4500mA

Drain Current at 1dB Compression

f = 4.40-5.00GHz

Caution! ESD sensitive device.

MIN

41

9.5

TYP

42

10.5

MAX

UNITS

dBm

dB

±0.7

31

4500

-43

-46

9000

-2.5

1.8

13000

-4.0

2.1

o

dB

%

5100

mA

dBc

mA

V

C/W

Output 3rd Order Intermodulation Distortion

∆f

= 10 MHz 2-Tone Test; Pout = 31 dBm S.C.L

2

V

DS

= 10 V, I

DSQ

≈

65% IDSS

f = 5.00GHz

Saturated Drain Current

Pinch-off Voltage

Thermal Resistance

3

V

DS

= 3 V, V

GS

= 0 V

V

DS

= 3 V, I

DS

= 84 mA

Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING

SYMBOLS

PARAMETERS

ABSOLUTE

15V

-5V

Output power reach 3dB

Gain Compression point

175°C

-65°C to +175°C

71W

1

OPERATING

10V

-4V

2

Vds

Vgs

Pin

Tch

Tstg

Pt

Drain-Source Voltage

Gate-Source Voltage

Input Power

Channel Temperature

Storage Temperature

Total Power Dissipation (Tc=25

°

)

Output power reach 3dB

Gain Compression point

175°C

-65°C to +175°C

71W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web:

www.excelics.com

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