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EIC4953-8NH 参数 Datasheet PDF下载

EIC4953-8NH图片预览
型号: EIC4953-8NH
PDF下载: 下载PDF文件 查看货源
内容描述: 4.90-5.30 GHz的8瓦内部匹配功率场效应管 [4.90-5.30 GHz 8-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 2 页 / 120 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EIC4953-8NH的Datasheet PDF文件第2页  
EIC4953-8
ISSUED 02/28/2008
4.90-5.30 GHz 8-Watt Internally Matched Power FET
FEATURES
4.90–5.30GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
10.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 4.90-5.30GHz
V
DS
= 10 V, I
DSQ
2200mA
Gain at 1dB Compression
f = 4.90-5.30GHz
V
DS
= 10 V, I
DSQ
2200mA
Gain Flatness
f = 4.90-5.30GHz
V
DS
= 10 V, I
DSQ
2200mA
Power Added Efficiency at 1dB Compression
f = 4.90-5.30GHz
V
DS
= 10 V, I
DSQ
2200mA
Drain Current at 1dB Compression
f = 4.90-5.30GHz
Output 3rd Order Intermodulation Distortion
∆f=10MHz
2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 10 V, I
DSQ
65% I
DSS
f = 5.30GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2. S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
38.5
9.5
TYP
39.5
10.5
MAX
UNITS
dBm
dB
±0.6
35
2300
-43
-46
4000
-2.5
3.5
5000
-4.0
4.0
o
dB
%
2600
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
86.4mA
-14.4mA
38.5dBm
175
o
C
-65 to +175
o
C
38W
CONTINUOUS
2
10V
-4.5V
28.8mA
-4.8mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
38W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised February 2008