EIC5359-4
ISSUED 5/15/2006
5.3-5.9 GHz 4-Watt Internally Matched Power FET
Excelics
EIC5359-4
FEATURES
•
•
•
•
•
•
5.3– 5.9GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
10.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
Hermetic Metal Flange Package
YM
SN
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 5.3-5.9GHz
V
DS
= 10 V, I
DSQ
≈
1100mA
Gain at 1dB Compression
f = 5.3-5.9GHz
V
DS
= 10 V, I
DSQ
≈
1100mA
Gain Flatness
f = 5.3-5.9GHz
V
DS
= 10 V, I
DSQ
≈
1100mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
1100mA
f = 5.3-5.9GHz
Drain Current at 1dB Compression
f = 5.3-5.9GHz
Output 3rd Order Intermodulation Distortion
∆f=10MHz
2-Tone Test. Pout=25.5 dBm S.C.L
Vds = 10 V, I
DSQ
≈
65% I
DSS
f = 5.9GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
35.5
9.5
TYP
36.5
10.5
MAX
UNITS
dBm
dB
±0.6
34
1200
-43
-46
2000
-2.5
5.5
2500
-4.0
6
o
dB
%
1400
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 20 mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
43.2mA
-7.2mA
35.5dBm
175 C
o
-65 to +175 C
o
CONTINUOUS
2
10V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
25W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised May 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
