Preliminary
EIC6775-15
ISSUED 10/08/2008
6.70-7.50 GHz 15-Watt Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
•
•
•
•
•
•
6.70– 7.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+42.0 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
31% Power Added Efficiency
100% Tested for DC, RF, and R
TH
Excelics
EIC6775-15
0.945
0.803
0.024
0.580
YYWW
SN
0.315
0.685
0.010
0.158
0.617
0.004
0.055
0.095
0.055
0.168
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 6.70-7.50GHz
V
DS
= 10 V, I
DSQ
≈
4500mA
Gain at 1dB Compression
f = 6.70-7.50GHz
V
DS
= 10 V, I
DSQ
≈
4500mA
Gain Flatness
f = 6.70-7.50GHz
V
DS
= 10 V, I
DSQ
≈
4500mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
4500mA
f = 6.70-7.50GHz
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
f = 6.70-7.50GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 85 mA
MIN
41.0
7.0
TYP
42.0
8.0
MAX
UNITS
dBm
dB
±0.6
31
4600
8500
-2.5
2.0
5200
11000
-4.0
2.5
o
dB
%
mA
mA
V
C/W
Note: 1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
189.9mA
-10.6mA
41.5dBm
175 C
-65 to +175
o
C
60W
o
CONTINUOUS
2
10V
-3V
63.3mA
-31.7mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
60W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
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EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
