欢迎访问ic37.com |
会员登录 免费注册
发布采购

EIC7179-12 参数 Datasheet PDF下载

EIC7179-12图片预览
型号: EIC7179-12
PDF下载: 下载PDF文件 查看货源
内容描述: 7.10-7.90 GHz的12瓦内部匹配功率场效应管 [7.10-7.90 GHz 12-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 2 页 / 176 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EIC7179-12的Datasheet PDF文件第2页  
EIC7179-12
ISSUED 02/29/2008
7.10-7.90 GHz 12-Watt Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
7.10– 7.90GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.5 dBm Output Power at 1dB Compression
9.0 dB Power Gain at 1dB Compression
38% Power Added Efficiency
-47 dBc IM3 at PO = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
0.945
0.803
Excelics
EIC7179-12
0.024
0.580
YYWW
SN
0.315
0.685
0.010
0.158
0.617
0.004
0.055
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
3250mA
Gain at 1dB Compression
f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
3250mA
Gain Flatness
f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
3250mA
Power Added Efficiency at 1dB Compression
f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
3200mA
Drain Current at 1dB Compression
f = 7.10-7.90GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 7.90GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
40.5
8.0
TYP
41.5
9.0
MAX
UNITS
dBm
dB
±0.6
38
3500
-45
-47
6500
-2.5
2.3
7900
-4.0
2.8
o
dB
%
4150
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 62 mA
Note: 1) Tested with 50 Ohm gate resistor.
3) Overall Rth depends on case mounting.
MAXIMUM RATING AT 25°C
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
129.6mA
-21.6mA
37dBm
175 C
-65 to +175
o
C
54W
o
CONTINUOUS
2
10V
-4V
43.2mA
-7.2mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
54W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised February 2008