EIC7177-10
7.10-7.70 GHz 10-Watt Internally-Matched Power FET
FEATURES
•
•
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•
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7.10 – 7.70 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
9 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at Po = 29.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC7177-10 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f = 7.10-7.70GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain at 1dB Compression
f = 7.10-7.70GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain Flatness
f = 7.10-7.70GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
3200mA
f = 7.10-7.70GHz
Drain Current at 1Db Compression f = 7.10-7.70GHz
Output 3rd Order Intermodulation Distortion
2
∆f
= 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 7.70 GHz
MIN
39.5
8.0
TYP
40.5
9.0
MAX
UNITS
dBm
dB
±0.6
35
3200
-43
-46
5800
-2.5
2.5
6400
-4.0
3.0
o
dB
%
3600
mA
dBc
mA
V
C/W
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 60 mA
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised October 2003
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
