EIC8596-2
UPDATED 07/25/2007
8.50-9.60 GHz 2-Watt Internally-Matched Power FET
FEATURES
•
•
•
•
•
•
•
8.50-9.60GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.5 dBm Output Power at 1dB Compression
8.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 22.5 dBm SCL
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
Notes:
1.
2.
3.
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 8.50-9.60GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Gain at 1dB Compression
f = 8.50-9.60GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Gain Flatness
f = 8.50-9.60GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Power Added Efficiency at 1dB Compression
f = 8.50-9.60GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Drain Current at 1dB Compression
f = 8.50-9.60GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 9.60GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
Tested with 100 Ohm gate resistor.
S.C.L. = Single Carrier Level.
Overall Rth depends on case mounting.
MIN
32.5
7.0
TYP
33.5
8.0
±0.6
30
600
MAX
UNITS
dBm
dB
+ 0.8
dB
%
700
mA
dBc
-43
-46
1000
-2.5
11
1250
-4.0
12
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 10 mA
mA
V
o
C/W
MAXIMUM RATING AT 25
°C
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
21.6mA
-3.6mA
32.5dBm
175
o
C
-65 to +175
o
C
12.5W
CONTINUOUS
2
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
12.5W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised July 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
