EID1314A1-5
UPDATED 07/12/2007
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
•
•
•
•
•
•
•
13.75-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EID1314A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
= 1200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
= 1200mA
Gain Flatness
f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
= 1200mA
Power Added Efficiency at 1dB Compression
f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
= 1200mA
Drain Current at 1dB Compression f = 13.75-14.50GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
±0.6
35
1400
2080
-2.5
5.5
1800
2880
-4.0
6.0
o
MAX
UNITS
dBm
dB
dB
%
mA
mA
V
C/W
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised July 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
