EID1415A1-12
UPDATED 07/12/2007
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
FEATURES
•
14.40-15.35 GHz Bandwidth
•
Input/Output Impedance Matched to 50 Ohms
•
+41.0 dBm Output Power at 1dB Compression
•
6.0 dB Power Gain at 1dB Compression
•
25% Power Added Efficiency
•
Hermetic Metal Flange Package
•
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EID1415A1-12 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain at 1dB Compression
f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain Flatness
f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
3200mA
f = 14.40-15.35GHz
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
1
MIN
40.0
5.0
TYP
41.0
6.0
MAX
UNITS
dBm
dB
±0.6
25
3800
6000
-1.2
2.2
4800
8000
-2.5
2.5
o
dB
%
mA
mA
V
C/W
f = 14.40-15.35GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 60 mA
Notes:
1.
Tested with 50 Ohm gate resistor.
2.
Overall Rth depends on case mounting.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised July 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
