EID1415A1-8
UPDATED 11/12/2007
14.40-15.35GHz 8-Watt Internally-Matched Power FET
FEATURES
•
•
•
•
•
•
14.40-15.35GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
27% Power Added Efficiency
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Caution! ESD sensitive device.
MIN
38.5
5.5
TYP
39.5
6.5
±0.6
27
2800
4200
-1.2
3.5
3600
5760
-2.5
4.0
o
MAX
UNITS
dBm
dB
dB
%
mA
mA
V
C/W
Output Power at 1dB Compression f =14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Gain at 1dB Compression
f =14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Gain Flatness
f =14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Power Added Efficiency at 1dB Compression
f =14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Drain Current at 1dB Compression f =14.40-15.35GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE
1
15V
-5V
96.0mA
-19.2mA
38.5dBm
175C
-65C to +175C
37.5W
CONTINUOUS
2
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175C
-65C to +175C
37.5W
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised November 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
