EID1416-12
UPDATED 12/06/2006
14.0-16.0 GHz 12-Watt Internally Matched Power FET
Excelics
FEATURES
•
•
•
•
•
•
14.0– 16.0GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.0 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
22% Power Added Efficiency
Hermetic Metal Flange Package
.827±.010 .669
.120 MIN
EID1416-12
YYWW
SN
.120 MIN
.024
.421
.125
.508±.008
.442
.168±.010
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
Note:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
40.0
4.0
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 14.0-16.0GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain at 1dB Compression
f = 14.0-16.0GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain Flatness
f = 14.0-16.0GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Power Added Efficiency at 1dB Compression
f = 14.0-16.0GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
f = 14.0-16.0GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 60 mA
TYP
41.0
5.0
MAX
UNITS
dBm
dB
±1.0
22
4000
6000
-1.0
2.5
5000
7500
-2.5
3.0
o
dB
%
mA
mA
V
C/W
MAXIMUM RATING
1,2
(T
a
= 25°C)
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15V
-5V
135mA
-21mA
40.0dBm
o
175 C
o
-65 to +175 C
CONTINUOUS
2
10V
-3V
45mA
-7mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
50W
V
DS
V
GS
Igsf
Igsr
Pin
Tch
Tstg
Pt
50W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
