EMA205B
9-16 GHz Medium Power MMIC
FEATURES
•
•
•
•
•
•
•
•
9-16 GHz BANDWIDTH
+18.0 dBm TYPICAL OUTPUT POWER
14 dB
±
1.5 dB TYPICAL POWER GAIN
TWO SECTION, DISTRIBUTED AMPLIFIER
DUAL BIAS SUPPLY
0.3 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
APPLICATIONS
•
•
•
Analog and Digital Wireless Systems
Military Applications
C-Band Terrestrial Radio
Caution! ESD sensitive device.
Chip Size 1060 x 2000 microns
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
F
P
1dB
Gss
∆Gss
NF
Input RL
Output RL
Idd
Vdd
PARAMETERS/TEST CONDITIONS
1
Operating Frequency Range
Ouput Power at 1dB Gain Compression @ Vdd=6V 50%
Idss
Small Signal Gain
Small Signal Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
Power Supply Current
Power Supply Voltage
9
7
160
5
8
MIN
9
16.5
12
18.0
14
±
1.5
4
±
2.0
TYP
MAX
16
UNITS
GHz
dBm
dB
dB
dB
dB
dB
mA
V
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised May 2004
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
