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EMP103 参数 Datasheet PDF下载

EMP103图片预览
型号: EMP103
PDF下载: 下载PDF文件 查看货源
内容描述: 6.4 - 8.0 GHz功率放大器MMIC [6.4 - 8.0 GHz Power Amplifier MMIC]
分类和应用: 放大器功率放大器
文件页数/大小: 2 页 / 248 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EMP103的Datasheet PDF文件第2页  
EMP103
ISSUED DATE: 07-12-04
6.4 – 8.0 GHz Power Amplifier MMIC
FEATURES
6.4 – 8.0 GHz Operating Frequency Range
32.5dBm Output Power at 1dB Compression
15.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 22dBm
Dimension: 2200um X 3000um
Thickness: 65um + 15um
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
°C,
50 ohm, VDD=10V, IDQ=1000mA)
SYMBOL
F
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
V
DD
Rth
Tb
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 22dBm
Input Return Loss
Output Return Loss
Saturate Drain Current
Power Supply Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
- 35
V
DS
=3V, V
GS
=0V
MIN
6.4
31.5
13.0
32.5
15.0
-40.0
-15
-6
1680
10
7
+ 80
o
TYP
MAX
8.0
UNITS
GHz
dBm
dB
dBc
-10
dB
dB
mA
V
C/W
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DS
V
GS
I
DD
I
GSF
P
IN
T
CH
T
STG
P
T
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
VALUE
10V
- 4V
Idss
35 mA
@ 3dB compression
150°C
-65/150°C
17W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
–T
HS
)/R
TH
; where T
HS
= ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised July 2004