EMP112
UPDATED 02/06/2006
5.0 – 7.2 GHz Power Amplifier MMIC
FEATURES
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5.0 – 7.2 GHz Operating Frequency Range
30.0dBm Output Power at 1dB Compression
20.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 20 dBm
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2.65mm x 2.0mm
Thickness: 85um + 15um
APPLICATIONS
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(
Tb = 25
°C,
50 ohm, Vds = 7 V, Idsq = 800 mA, Unless Otherwise Specified
)
SYMBOL
F
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
Vds
NF
Rth
Tb
SYMBOL
Vds
V
GS
Ids
I
GSF
P
IN
T
CH
T
STG
P
T
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3 Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 20dBm,
7V, 60%+10%Idss
Input Return Loss
Output Return Loss
Saturated Drain Current
Drain to Source Voltage
Noise Figure @6GHz
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12V
-8V
Idss
114mA
27dBm
175°C
-65/175°C
12.4W
- 35
Vds =3V, V
GS
=0V
980
rd
MIN
5.0
29.0
17.0
TYP
MAX
7.2
UNITS
GHz
dBm
dB
30.0
20.0
-41
-12
-5
1140
7
8
11
+ 85
CONTINUOUS
8V
-4V
1300mA
19 mA
1350
8
-38
-8
dBc
dB
dB
mA
V
dB
o
C/W
ºC
MAXIMUM RATINGS AT 25°C
1,2
@ 3dB compression
150°C
-65/150°C
10.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T
CH
–Tb)/R
TH
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 3
Revised February 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
