EMP210
UPDATED 05/08/2008
9.5 – 12 GHz Power Amplifier MMIC
FEATURES
•
•
•
•
9.5 – 12.0 GHz Operating Frequency Range
24.0dBm Output Power at 1dB Compression
17.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 12.5dBm
Dimension: 2250um X 1000um
Thickness: 75um ± 13um
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
°C,
50 ohm, VDD=7V, IDQ=180mA)
SYMBOL
F
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
V
DD
Rth
Tb
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 12.5dBm
Vdd=7V, Idsq=60%±10%Idss
Input Return Loss
Output Return Loss
Saturated Drain Current
Drain Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
-35
V
DS
=3V, V
GS
=0V
211
MIN
9.5
22.5
15.0
24.0
17.0
-41
-10
-8
264
7
34
+85
-38
-8
-5
317
8
o
TYP
MAX
12.0
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
C/W
ºC
MAXIMUM RATINGS AT 25°C
1,2
SYMBOL
V
DS
V
GS
I
DD
I
GSF
P
IN
T
CH
T
STG
P
T
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12V
-8V
Idss
24mA
20dBm
175°C
-65/175°C
4.1W
CONTINUOUS
8V
-4 V
264
4mA
@ 3dB compression
150°C
-65/150°C
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
–T
HS
)/R
TH
; where T
HS
= ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 3
Revised May 2008
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
