EMP214
UPDATED 05/08/2008
12.50 – 15.50 GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
•
12.5 – 15.5 GHz Operating Frequency Range
29.5dBm Output Power at 1dB Compression
16.0 dB Typical Small Signal Gain
-42dBc OIMD3 @Each Tone Pout 18.5dBm
Dimension: 2650um X 2140um
Thickness: 85um ± 15um
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
°C,
50 ohm, VDD=7V, IDQ=750mA)
SYMBOL
PARAMETER/TEST CONDITIONS
EMP214
F
Operating Frequency Range
EMP214H
EMP214L
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
V
DD
Rth
Tb
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
Ids=60%±10%Idss
Input Return Loss
Output Return Loss
Saturate Drain Current V
DS
=3V, V
GS
=0V
Power Supply Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
-35
920
MIN
12.5
13.5
12.5
28.5
13.0
29.5
16.0
-42
-15
-15
1150
7
11
+85
o
TYP
MAX
15.5
15.5
14.5
UNITS
GHz
dBm
dB
-39
-10
-10
1380
dBc
dB
dB
mA
V
C/W
ºC
MAXIMUM RATINGS AT 25°C
1,2
SYMBOL
V
DS
V
GS
I
DD
I
GSF
P
IN
T
CH
T
STG
P
T
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-8 V
Idss
114mA
27dBm
175°C
-65/175°C
12.4W
CONTINUOUS
8V
-4 V
1300mA
19mA
@ 3dB compression
150°C
-65/150°C
10.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
–T
HS
)/R
TH
; where T
HS
= Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 3
Revised May 2008
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
