Excelics
DATA SHEET
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NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+20.0dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 18GHz
TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED
GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
EPA018A-70
High Efficiency Heterojunction Power FET
20
D
44
19
4
180 Min.
(All Leads)
S
S
40
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
NF
Ga
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
Noise Figure
Vds=2V, Ids=15mA
Associated Gain
Vds=2V, Ids=15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.0mA
-9
-6
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
f=12GHz
f=12GHz
30
35
MIN
18.5
11.0
TYP
20.0
20.0
13.5
11.0
45
0.75
12.5
55
60
-1.0
-15
-14
480
*
o
MAX
UNIT
dBm
dB
%
dB
dB
80
mA
mS
-2.5
V
V
V
C/W
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-6V
-3V
Ids
Drain Current
Idss
40mA
Igsf
Forward Gate Current
9mA
1.5mA
Pin
Input Power
16dBm
@ 3dB Compression
o
Tch
Channel Temperature
175 C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
285mW
240mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site:
www.excelics.com
70
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
