Excelics
DATA SHEET
EPA018BV
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
•
•
VERY HIGH fmax: 120GHz
+20.0dBm TYPICAL OUTPUT POWER
13.0dB TYPICAL POWER GAIN AT 18 GHz
TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED
GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND VIA HOLE GROUNDING
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 5 mA PER BIN RANGE
:
Via Hole
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
NF
Ga
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=6V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=6V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12Ghz
Noise Figure
f=12GHz
Vds=2V, Ids=15mA
Associated Gain
f=12GHz
Vds=2V, Ids=15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.0mA
Igd=0.5mA
Igs=0.5mA
-9
-7
MIN
18.0
13.0
TYP
20.0*
20.0*
14.5
13.0
48
0.75
12.5
30
35
55
60
-1.0
-15
-14
140
o
MAX
UNIT
dBm
dB
%
dB
dB
80
mA
mS
-2.5
V
V
V
C/W
Thermal Resistance (Au-Sn Eutectic Attach)
* P
1dB
= 21.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
9mA
16dBm
175
o
C
-65/175
o
C
950mW
CONTINUOUS
2
6V
-3V
Idss
1.5mA
@3dB Compression
150
o
C
-65/150
o
C
800mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site:
www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
