Excelics
PRELIMINARY DATA SHEET
EPA030B
High Performance Heterojunction Dual-Gate FET
•
•
•
•
•
•
•
+18.0dBm TYPICAL OUTPUT POWER
19.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 300 MICRON RECESSED “MUSHROOM”
DUAL GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING
PROFILE PROVIDES EXTRA HIGH PERFORMANCE
AND HIGH RELIABILITY
MIXER, SWITCH, AGC AND TEMPERATURE
COMPENSATION APPLICATIONS
Idss SORTED IN 5mA PER BIN RANGE
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
NF
Ga
Idss
Gm
Vp1
Vp2
BVg2d
BVg1s
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss, Vg2s=0V
Gain at 1dB Compression
Vds=6V, Ids=50% Idss, Vg2s=0V
Noise Figure
Vds=3V, Ids=15mA, Vg2s=0V
Associated Gain
Vds=3V, Ids=15mA, Vg2s=0V
Saturated Drain Current
Transconductance
Vds=3V, Vg1s=-0.5V, Vg2s=0V
Pinch-off Voltage
Pinch-off Voltage
Vds=3V, Ids=1.0mA, Vg2s=0V
Vds=3V, Ids=1.0mA, Vg1s=0V
-10
-6
f=12GHz
f=12GHz
f=12GHz
f=12GHz
30
40
MIN
15.0
17.5
TYP
18.0
19.5
1.2
17.5
80
70
-1.5
-1.5
-14
-12
125
o
MAX
UNIT
dBm
dB
dB
dB
Vds=3V, Vg1s=Vg2s=0V
115
mA
mS
-3.5
-3.5
V
V
V
V
C/W
Gate 2 to Drain Breakdown Voltage
Ig2d=1.0mA, Gate 1 Open
Gate 1 to Source Breakdown Voltage
Ig1s=1.0mA, Gate 2 Open
Thermal Resistance (Au-Sn Eutectic Attach)
Excelics Semiconductor, Inc., 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site:
www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
