EPA030D
UPDATED 11/30/2004
High Performance Heterojunction Dual-Gate FET
FEATURES
•
•
•
•
•
•
•
+18.0 dBm OUTPUT POWER AT 1dB COMPRESSION
19.5 dB POWER GAIN AT 12GHz
0.3 x 300 MICRON RECESSED “MUSHROOM” DUAL GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
EXTRA HIGH PERFORMANCE AND HIGH RELIABILITY
MIXER, SWITCH, AGC AND TEMPERATURE
COMPENSATION APPLICATIONS
Idss SORTED IN 5mA PER BIN RANGE
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
NF
Ga
I
DSS
G
M
V
P1
V
P2
BV
G2D
BV
G1S
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS,
V
G2S =
0V
Gain at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS,
V
G2S =
0V
Noise Figure
V
DS
= 3V, I
DS
≈
15mA
,
V
G2S =
0V
Associated Gain
V
DS
= 3V, I
DS
≈
15mA
,
V
G2S =
0V
Saturated Drain Current
Transconductance
Pinch-off Voltage
Pinch-off Voltage
f = 12GHz
f = 12GHz
f = 12GHz
f = 12GHz
Caution! ESD sensitive device.
MIN
15.0
17.5
TYP
18.0
19.5
1.2
17.5
30
40
80
70
-1.5
-1.5
-10
-6
-14
-12
125
o
MAX
UNITS
dBm
dB
dB
dB
V
DS
= 3V, V
G1S
= V
G2S
= 0 V
V
DS
= 3V, V
G1S
= -0.5V
,
V
G2S
= 0 V
V
DS
= 3V, I
DS
= 1.0mA
,
V
G2S
= 0 V
V
DS
= 3V, I
DS
= 1.0mA
,
V
G1S
= 0 V
115
mA
mS
-3.5
-3.5
V
V
V
V
C/W
Gate 2 to Drain Breakdown Voltage
I
G2D
= 1.0mA
,
Gate 1 Open
Gate 1 to Source Breakdown Voltage
I
G1S
= 1.0mA
,
Gate 2 Open
Thermal Resistance
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
