欢迎访问ic37.com |
会员登录 免费注册
发布采购

EPA060B 参数 Datasheet PDF下载

EPA060B图片预览
型号: EPA060B
PDF下载: 下载PDF文件 查看货源
内容描述: 高效异质结功率FET [High Efficiency Heterojunction Power FET]
分类和应用:
文件页数/大小: 3 页 / 49 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EPA060B的Datasheet PDF文件第2页浏览型号EPA060B的Datasheet PDF文件第3页  
Excelics
EPA060B/EPA060BV
DATA SHEET
High Efficiency Heterojunction Power FET

+26.5dBm TYPICAL OUTPUT POWER
10.0dB TYPICAL POWER GAIN FOR EPA060B AND
11.5dB FOR EPA060BV AT 18GHz
0.4dB TYPICAL NOISE FIGURE AT 2GHz
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA060BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 15mA PER BIN RANGE

'



*

 
Chip Thickness: 75
±
20 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
Output Power at 1dB Compression
P
1dB
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
G
1dB
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
PAE
NF
G
A
Idss
Gm
Vp
BVgd
BVgs
Rth
Vds=8V, Ids=50% Idss
Noise Figure Vds=5V,Ids=50mA
f=12GHz
f=2GHz
45
0.4
20
110
120
180
190
-1
-11
-7
-15
-14
75
-2.5
250
f=12GHz
f=18GHz
f=12GHz
f=18GHz
11
25
:
Via Hole
No Via Hole For EPA060B
EPA060BV
MAX
MIN
25
TYP
26.5
26.5
13
14.5
11.5
dB
dBm
MAX
UNIT
EPA060B
TYP
26.5
26.5
13
10
46
0.4
20
110
120
180
190
-1
-11
-7
-15
-14
55
o
%
dB
dB
250
mA
mS
-2.5
V
V
V
C/W
Associated Gain Vds=5V,Ids=50mA f=2GHz
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=2.0mA
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EPA060B
ABSOLUTE
1
EPA060BV
2
CONTINUOUS
8V
-3V
190mA
5mA
@ 3dB
Compression
150
o
C
-65/150
o
C
1.5W
ABSOLUTE
1
12V
-8V
Idss
30mA
24dBm
175
o
C
-65/175
o
C
2.5W
CONTINUOUS
2
8V
-3V
Idss
5mA
@ 3dB
Compression
150
o
C
-65/150
o
C
2.1W
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
30mA
24dBm
175
o
C
-65/175
o
C
1.8W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com