EPA120B-100P
UPDATED 10/30/2006
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+29.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY AND HIGH RELIABILITY
G
D
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 12GHz
f= 18GHz
V
DS
= 8V, I
DS
≈
50% I
DSS
Gain at 1dB Compression
f= 12GHz
f= 18GHz
V
DS
= 8V, I
DS
≈
50% I
DSS
Power Added Efficiency at 1dB Compression
f=12GHz
V
DS
= 8V, I
DS
≈
50% I
DSS
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 3.0 mA
I
GD
= 1.2mA
I
GS
= 1.2mA
MIN
27.5
8.5
TYP
29.0
29.0
10.0
7.5
41
MAX
UNIT
dBm
dB
%
220
240
-13
-7
360
380
-1.0
-15
-14
45*
500
-2.5
mA
mS
V
V
V
ºC/W
Thermal Resistance (Au-Sn Eutectic Attach)
Note:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
V
DS
V
GS
Igf
Igr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-5V
5.4 mA
0.9 mA
26 dBm
175
o
C
-65/175
o
C
3.0 W
CONTINUOUS
2
8V
-3V
1.8 mA
0.3 mA
@ 3dB Compression
175
o
C
-65/175
o
C
3.0 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
