EPA120E-CP083
UPDATED 02/15/2005
High Efficiency Heterojunction Power FET
FEATURES
•
•
•
•
•
•
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+29 dBm OUTPUT POWER AT 1dB COMPRESSION
19.5 dB GAIN AT 2 GHz
0.3x1200 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
All Dimensions in mil
Tolerance: ± 3 mil
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
*
PARAMETER/TEST CONDITIONS
Output Power at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Gain at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f=
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
2.0 GHz
12.0 GHz
2.0 GHz
12.0 GHz
2.0 GHz
Caution! ESD sensitive device.
MIN
27.5
18.0
TYP
29.0
29.0
19.5
7.0
43
210
240
360
380
-1.0
-13
-7
-15
-14
40
o
MAX
UNITS
dBm
dB
%
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 3.5 mA
I
GD
= 1.2 mA
I
GS
= 1.2 mA
510
mA
mS
-2.5
V
V
V
C/W
Notes:
*
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
8V
-3 V
405 mA
10 mA
@ 3dB compression
3.8 W
150°C
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised February 2005
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
