EPA160A-100P
UPDATED 02/15/2005
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+31.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
G
D
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
•
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 12GHz
Vds=8V, Ids=50% Idss
f= 18GHz
Gain at 1dB Compression
f= 12GHz
Vds=8V, Ids=50% Idss
f= 18GHz
Power Added Efficiency at 1dB Compression
Vds=8 V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=4.5mA
Igd=1.6mA
Igs=1.6mA
-13
-7
MIN
29.0
9.5
TYP
31.0
31.0
11.5
8.0
41
290
320
480
500
-1.0
-15
-14
33*
-2.5
660
MAX
UNIT
dBm
dB
%
mA
mS
V
V
V
ºC/W
Thermal Resistance (Au-Sn Eutectic Attach)
Overall Rth depends on case mounting.
CONTINUOUS
1,2
8V
-3V
435mA
14mA
@ 3dB Compression
150
o
C
-65 to +150
o
C
3.4W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
PARAMETERS
Drain-Source Voltage
Vds
Gate-Source Voltage
Vgs
Drain Current
Ids
Forward Gate Current
Igsf
Input Power
Pin
Channel Temperature
Tch
Storage Temperature
Tstg
Total Power Dissipation
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised February 2005
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
