EPA680A/EPA680AV
UPDATED 05/02/2006
High Efficiency Heterojunction Power FET
1320
60
231
D
D
D
D
48
FEATURES
•
•
•
•
•
•
+36.5dBm TYPICAL OUTPUT POWER
6.5dB TYPICAL POWER GAIN FOR EPA680A
AND 8.0dB FOR EPA680AV AT 12GHz
0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY AND RELIABILITY
Idss SORTED IN 160mA PER BIN RANGE
440
100
40
G
G
G
G
135
201
50
Chip Thickness: 45
±
15 microns
:
Via Hole
No Via Hole For EPA680A
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V,Ids=20mA
Igd=6.8mA
Igs=6.8mA
-13
-7
35.5
5.5
TYP
36.5
6.5
33
1250
1360
2050
2150
-1.0
-15
-14
6
Caution! ESD sensitive device.
EPA680A
MAX
MIN
35.5
7
EPA680AV
UNIT
TYP
36.5
8
36
2690
1250
1360
-2.5
-13
-7
2050
2150
-1.0
-15
-14
5.5
o
MAX
dBm
dB
%
2690
mA
mS
-2.5
V
V
V
C/W
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note:
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
EPA680A
ABSOLUTE
1
12V
-5V
30.6 mA
-5.1 mA
33.5 dBm
o
175 C
o
-65/175 C
23 W
CONTINUOUS
2
8V
-3V
10.2 mA
-1.7 mA
@ 3dB Compression
175
o
C
-65/175
o
C
23 W
12V
-5V
30.6 mA
-5.1 mA
33.5 dBm
175
o
C
-65/175
o
C
25 W
EPA680AV
ABSOLUTE
1
CONTINUOUS
2
8V
-3V
10.2 mA
-1.7 mA
@ 3dB Compression
175
o
C
-65/175
o
C
25 W
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 3
Revised May 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
