EPA680AV-180F
ISSUED 05/02/2006
High Efficiency Heterojunction Power FET
FEATURES
•
•
•
•
•
•
Non-Hermetic 180mil Metal Flange Package
+36.5 dBm Typical Output Power
17.5 dB Typical Power Gain at 2GHz
0.4 x 6800 Micron Recessed “Mushroom” Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile
Provides Extra High Power Efficiency and
High Reliability
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 2GHz
f = 4GHz
V
DS
= 8 V, I
DS
≈
50% I
DSS
Gain at 1dB Compression
f = 2GHz
f = 4GHz
V
DS
= 8 V, I
DS
≈
50% I
DSS
Power Added Efficiency at 1dB Compression
f = 2GHz
V
DS
= 8 V, I
DS
≈
50% I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 20 mA
I
GD
= 6.8 mA
I
GS
= 6.8 mA
Caution! ESD sensitive device.
MIN
35.0
16.0
TYP
36.5
36.5
17.5
12.5
45
1250
1360
-13
-7
2050
2150
-1.0
-15
-14
7*
o
MAX
UNITS
dBm
dB
%
2690
-2.5
mA
mS
V
V
V
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reversed Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-5V
30.6 mA
-5.1 mA
33.5 dBm
175
o
C
-65/175
o
C
21 W
CONTINUOUS
2
8V
-3V
10.2 mA
-1.7 mA
@ 3dB Compression
175
o
C
-65/175
o
C
21 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised May 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
