Excelics
PRELIMINARY DATA SHEET
•
•
•
•
•
•
+38.5dBm TYPICAL OUTPUT POWER
18.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 9600 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 240mA PER BIN RANGE
'
'
EPA960B
High Efficiency Heterojunction Power FET
'
'
6
*
6
*
6
*
6
*
6
Chip Thickness: 50
±
10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
MIN
37.0
17.0
1760
1920
TYP
38.5
38.5
18.5
13.5
2880
3120
-1.0
-11
-7
-15
-14
5
o
MAX
UNIT
dBm
dB
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=28mA
3760
mA
mS
-2.5
V
V
V
C/W
Drain Breakdown Voltage Igd=9.6mA
Source Breakdown Voltage Igs=9.6mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
2.8A
Ids
Forward Gate Current
480mA
80mA
Igsf
Input Power
36dBm
@ 3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
27 W
23 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
