EPA960CR-CP083
UPDATED 01/16/2006
High Efficiency Heterojunction Power FET
960CR
EPA
FEATURES
•
•
•
•
•
•
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+38 dBm OUTPUT POWER AT 1dB COMPRESSION
16.5 dB GAIN AT 2 GHz
0.4x9600 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
●
All Dimensions in mil
Tolerance: ± 3 mil
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
*
PARAMETER/TEST CONDITIONS
Output Power at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Gain at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f=
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
2.0 GHz
4.0 GHz
2.0 GHz
4.0 GHz
2.0 GHz
Caution! ESD sensitive device.
MIN
36.5
15.0
TYP
38.0
38.0
16.5
11.5
45
1760
1920
2880
3120
-1.0
-11
-7
-15
-14
6*
o
MAX
UNITS
dBm
dB
%
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 28 mA
I
GD
= 9.6 mA
I
GS
= 9.6 mA
3760
mA
mS
-2.5
V
V
V
C/W
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
86.4 mA
14.4 mA
36 dBm
175
o
C
-65/175
o
C
25 W
CONTINUOUS
2
8V
-3V
28.8 mA
4.8 mA
@ 3dB Compression
175
o
C
-65/175
o
C
25 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised January 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
