Excelics
DATA SHEET
•
•
•
•
•
•
VERY HIGH fmax: 120GHz
TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB
ASSOCIATED GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH
RELIABILITY
Idss SORTED IN 5 mA PER BIN RANGE
EPB018A5/A7/A9
Super Low Noise High Gain Heterojunction FET
'
6
6
*
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
NF
PARAMETERS/TEST CONDITIONS
Noise Figure, f=12GHz
Vds=2V, Ids=15mA
Ga
P
1dB
G
1dB
Idss
Gm
Vp
BVgd
BVgs
Rth
Associated Gain, f=12GHz
Vds=2V, Ids=15mA
Output Power at 1dB Compression
Vds=3V, Ids=25mA
Gain at 1dB Compression
Vds=3V, Ids=25mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
EPB018A5
EPB018A7
EPB018A9
EPB018A5
EPB018A7
EPB018A9
f=12GHz
f=18GHz
f=12GHz
f=18GHz
MIN
TYP
0.50
0.65
0.95
13.0
12.5
12.0
15.0
15.0
15.0
13.0
45
90
-0.8
-3
-3
-6
-6
185
o
MAX
0.60
0.80
1.20
UNIT
dB
12.0
11.5
11.0
dB
dBm
dB
80
mA
mS
-2.5
V
V
V
C/W
Vds=2V, Vgs=0V
15
50
Vds=2V, Vgs=0V
Vds=2V, Ids=1.0mA
Drain Breakdown Voltage Igd=10uA
Source Breakdown Voltage Igs=10uA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
5V
4V
Vds
Gate-Source Voltage
-3V
-2V
Vgs
Drain Current
Idss
Idss
Ids
Forward Gate Current
2mA
0.3mA
Igsf
Input Power
12dBm
@1dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
740mW
625mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site:
www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
