EPB018B5/B7/B9-70
ISSUED 11/01/2007
Super Low Noise High Gain Heterojunction FET
FEATURES
•
•
•
•
•
NON-HERMETIC LOW COST CERAMIC 70 mil
PACKAGE
TYPICAL 0.50~0.90dB NOISE FIGURE AND
11.5~13.0dB ASSOCIATED GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “ MUSHROOM”
GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES SUPER LOW NOISE, HIGH
GAIN AND HIGH RELIABILITY
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
NF
PARAMETERS/TEST CONDITIONS
EPB018B5-70
EPB018B7-70
EPB018B9-70
EPB018B5-70
Associated Gain, f = 12GHz
EPB018B7-70
V
DS
= 2 V, I
DS
≈
15 mA
EPB018B9-70
Output Power at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 3 V, I
DS
= 25 mA
Gain at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 3 V, I
DS
= 25 mA
Saturated Drain Current
V
DS
= 2 V, V
GS
= 0 V
Noise Figure, f = 12GHz
V
DS
= 2 V, I
DS
≈
15 mA
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
DS
= 1.0 mA
I
GD
= 10 uA
I
GS
= 10 uA
-3
-3
MIN
TYP
0.50
0.65
0.95
13.0
12.5
11.5
15.0
15.0
14.0
11.5
45
90
-0.8
-6
-6
480*
o
MAX
0.60
0.80
1.20
UNITS
dB
Ga
P
1dB
G
1dB
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
11.5
11.0
10.5
dB
dBm
dB
80
-2.5
mA
mS
V
V
V
C/W
15
50
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25°C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
5V
-3V
Idss
2mA
12dBm
175 C
-65/175 C
285mW
o
o
CONTINUOUS
2
4V
-2V
60mA
0.3mA
@1dB Compression
150 C
-65/150 C
240mW
o
o
Notes: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
