Excelics
DATA SHEET
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NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE
TYPICAL 0.85dB NOISE FIGURE AND 10.5dB
ASSOCIATED GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH
RELIABILITY
180 Min.
(All Leads)
EPB025A-70
Low Noise High Gain Heterojunction FET
20
D
44
19
4
S
S
40
G
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
NF
Ga
P
1dB
G
1dB
Idss
Gm
Vp
BVgd
BVgs
Rth
*
All Dimensions In mils
PARAMETERS/TEST CONDITIONS
Noise Figure
Vds=2V, Ids=15mA
Associated Gain
Vds=2V, Ids=15mA
Output Power at 1dB Compression
Vds=3V, Ids=25mA
Gain at 1dB Compression
Vds=3V, Ids=25mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
f = 12GHz
f = 12GHz
f=12GHz
f=18GHz
f=12GHz
f=18GHz
MIN
TYP
0.85
MAX
1.0
UNIT
dB
dB
dBm
dB
9.5
10.5
15.0
15.0
12.0
9.5
Vds=2V, Vgs=0V
Vds=2V, Vgs=0V
Vds=2V, Ids=1.0mA
20
50
50
80
-1.0
80
mA
mS
-2.5
V
V
V
o
Drain Breakdown Voltage Igd=10uA
Source Breakdown Voltage Igs=10uA
Thermal Resistance
-3
-3
-5
-5
370
*
C/W
Overall Rth depends on case mounting
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
5V
3V
Vds
Gate-Source Voltage
-3V
-3V
Vgs
Drain Current
Idss
50mA
Ids
Forward Gate Current
2mA
0.3mA
Igsf
Input Power
12dBm
@ 1dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
370mW
310mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
70
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
