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RFMA0912-0.5W-Q7 参数 Datasheet PDF下载

RFMA0912-0.5W-Q7图片预览
型号: RFMA0912-0.5W-Q7
PDF下载: 下载PDF文件 查看货源
内容描述: 9.5 - 11.7 GHz高增益表面贴装PA [9.5 - 11.7 GHz High Gain Surface-Mounted PA]
分类和应用:
文件页数/大小: 3 页 / 128 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号RFMA0912-0.5W-Q7的Datasheet PDF文件第2页浏览型号RFMA0912-0.5W-Q7的Datasheet PDF文件第3页  
RFMA0912-0.5W-Q7
UPDATED: 04/22/2008
9.5 – 11.7 GHz High Gain Surface-Mounted PA
FEATURES
9.5 – 11.7GHz Operating Frequency Range
27.0dBm Output Power @1dB Compression
30.0dB Typical Power Gain @1dB Compression
-41dBc OIMD3 @Pout 16dBm/tone
7X7mm QFN Package
Point-to-point and point-to-multipoint radio
Military Radar Systems
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power @1dB Gain Compression
Gain @1dB Gain Compression
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Pout = 16dBm/tone
Input Return Loss
Output Return Loss
Drain Current
1
Drain Current
1
Drain Voltage
Gate Voltage
Thermal Resistance
2
Operating Base Plate Temperature
-30
-2.5
13
+80
MIN
9.5
26.0
27.0
27.0
30.0
-41
-10
-6
190
400
7
220
460
8
-0.25
o
APPLICATIONS
ELECTRICAL CHARACTERISTICS (T
B
=25
°C)
SYMBOL
F
P
1dB
G
1dB
OIMD3
Input RL
Output RL
I
D1
I
D2
V
D1
, V
D2
V
G1
, V
G2
Rth
Tb
TYP
MAX
11.7
UNITS
GHz
dBm
dB
-38
-8
dBc
dB
dB
mA
mA
V
V
C/W
o
C
1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0.3V to achieve typical current levels.
2. Rth is mounting dependent. Measured result when used with Excelics recommended evaluation board.
3,4
MAXIMUM RATINGS AT 25°C
SYMBOL
V
D1
, V
D2
V
G1
, V
G2
I
D1
, I
D2
P
IN
T
CH
T
STG
P
T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
CHARACTERISTIC
ABSOLUTE
12V
-5V
Idss
20dBm
175°C
-65/175°C
8.8W
CONTINOUS
8V
-2.5 V
220, 460mA
@ 3dB compression
150°C
-65/150°C
7.4W
3. Operation beyond
absolute
or
continuous
ratings may result in permanent damage or reduction of MTTF respectively.
4. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
–T
B
)/R
TH
; where T
B
= Temperature of Base Plate
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 3
Revised May 2008