RFMA2124-2W-P3
UPDATED: 01/09/2007
21.2 – 23.6 GHz Power Amplifier MMIC
Vg
FEATURES
•
•
•
•
21.2– 23.6GHz Operating Frequency Range
31.0dBm Output Power at 1dB Compression
22dB Typical Power Gain @ 1dB Gain Compression
-39dBc Typical OIM3 @ each tone Pout 20dBm
RF IN
Excelics
RFMA2124
-2W-P3
Vd
RF OUT
Vg
Vd
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
°C,
50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
F
P1dB
G1dB
OIMD3
Input RL
Output RL
Idd
Vdd
Vgg
Rth
Tb
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power at 1dB Gain Compression
Gain @ 1dB gain compression
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 20dBm
Input Return Loss
Output Return Loss
Drain Current
Drain Voltage
Gate Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
-30
MIN
21.2
30.0
18.0
31.0
22.0
-39
-10
-15
1700
7
-5
4.0
4.5
+80
o
TYP
MAX
23.6
UNITS
GHz
dBm
dB
-36
dBc
dB
-10
2300
8
dB
mA
V
V
C/W
ºC
MAXIMUM RATINGS @25°C
SYMBOL
V
DD
V
GG
I
DD
P
IN
T
CH
T
STG
P
T
CHARACTERISTIC
Drain Supply Voltage
Gate Supply Voltage
Drain Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12V
-8V
Idss
20dBm
175°C
-65/175°C
30.0W
CONTINUOUS
8V
-3V
3.6A
@ 3dB compression
150°C
-65/150°C
25.2W
1,2
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T
CH
–Tb)/R
TH
; where T
b
= operating base plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised January 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
