RFMA5880-0.1W-02
ISSUED: 12/23/08
5.8 – 8.0 GHz Power Amplifier MMIC
N/C
FEATURES
•
•
•
•
5.8 – 8.0GHz Operating Frequency Range
21.0dBm Output Power @1dB Compression
27.0dB Typical Power Gain @1dB Compression
-41dBc OIMD3 @Pout 11dBm/tone
Excelics
RFMA5880
-0.1W-02
Vd
RF IN
N/C
N/C
RF OUT
Vg
N/C
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
ELECTRICAL CHARACTERISTICS (T
B
=25
°C)
SYMBOL
F
P
1dB
G
1dB
OIMD3
Input RL
Output RL
I
D1
V
D
V
G
Rth
Tb
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power @1dB Gain Compression
Gain @1dB Gain Compression
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Pout = 17dBm/tone
Input Return Loss
Output Return Loss
Drain Current
1
Drain Voltage
Gate Voltage
Thermal Resistance
2
Operating Base Plate Temperature
-30
5
-5
22
+80
o
MIN
5.8
20.0
24.0
TYP
MAX
8.0
UNITS
GHz
dBm
dB
21.0
27
-41
-12
-10
300
400
7
-38
-10
dBc
dB
dB
mA
V
V
C/W
o
C
1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0.3V to achieve typical current levels.
2. Rth is mounting dependent. Measured result when used with Excelics recommended evaluation board.
3,4
MAXIMUM RATINGS AT 25°C
SYMBOL
V
D
V
G
I
D
P
IN
T
CH
T
STG
P
T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
CHARACTERISTIC
ABSOLUTE
12V
-5V
Idss
20dBm
175°C
-65/175°C
4.0W
CONTINOUS
8V
-2.5 V
400mA
@ 3dB compression
150°C
-65/150°C
3W
3. Operation beyond
absolute
or
continuous
ratings may result in permanent damage or reduction of MTTF respectively.
4. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
–T
B
)/R
TH
; where T
B
= Temperature of Base Plate
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Issued
December 2008
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
