EMB03N03A
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS
MIN TYP MAX
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
IGSS
30
V
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
1
1.5
3
±100
1
Gate‐Body Leakage
nA
Zero Gate Voltage Drain Current
IDSS
A
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 30A
25
On‐State Drain Current1
Drain‐Source On‐State Resistance1
ID(ON)
80
A
RDS(ON)
3.0
4.5
25
3.5
5.5
mΩ
VGS = 4.5V, ID = 20A
Forward Transconductance1
gfs
VDS = 5V, ID = 24A
S
DYNAMIC
Input Capacitance
Ciss
3850
635
522
1.2
64
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 15mV, VDS = 0V, f = 1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Coss
Crss
Rg
Ω
Total Gate Charge1,2
Qg(VGS=10V)
VDS = 15V, VGS = 10V,
ID = 30A
Qg(VGS=4.5V)
28
nC
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Qgs
Qgd
td(on)
tr
10
13
20
VDS = 15V,
15
nS
td(off)
tf
ID = 25A, VGS = 10V, RGS = 2.7Ω
65
20
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
80
170
1.3
A
ISM
VSD
trr
IF = IS, VGS = 0V
V
nS
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
32
200
12
IRM(REC)
Qrr
IF = IS, dlF/dt = 100A / S
nC
2011/12/16
p.2
EXCELLIANCE [ Excelliance MOS ]
