E S I
E S I
ADVANCED INFORMATION
Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
The ES25P80 device is a 3.0 volt (2.7V to 3.6V)
single power flash memory device. ES25P80 con-
sists of Sixteen sectors, each with 512 Kb memory.
The memory supports Sector Erase and Bulk Erase
instructions.
Each device requires only a 3.0 volt power supply
(2.7V to 3.6V) for both read and write functions.
Internally generated and regulated voltages are pro-
vided for program operations. This device does not
require Vpp supply.
Data appears on SI input pin when inputting data
into the memory and on the SO output pin when
outputting data from the memory. The devices are
designed to be programmed in-system with the
standard system 3.0 volt Vcc supply.
The memory can be programmed 1 to 256 bytes at
a time, using the Page Program instruction.
BLOCK DIAGRAM
PS
SRAM
Array - L
Array - R
Logic
RD
DATA PATH
IO
2
Rev. 0D May, 11, 2006
ES25P80
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
