E S I
I
ES
Excel Semiconductor inc.
Table 1. ES29LV160 Device Bus Operations
DQ0
~
DQ7
DQ8~DQ15
BYTE#
= V
IH
D
OUT
(Note 3)
High-Z
High-Z
Output Disable
Reset
L
X
Sector Protect
(Note 2)
Sector Unprotect
(Note 2)
Temporary Sector
Unprotect
L
H
X
H
H
X
L
H
L
V
ID
X
X
SA,A6=L,
A1=H,A0=L
SA,A6=H,
A1=H,A0=L
High-Z
High-Z
(Note 3)
High-Z
High-Z
X
X
Operation
CE#
OE#
WE#
RESET#
Addresses
(Note 1)
BYTE#
= V
IL
DQ8~DQ14 = High-Z,
DQ15 = A-1
Read
Write
Standby
L
L
Vcc+
0.3V
L
H
X
H
L
H
H
Vcc+
0.3V
A
IN
A
IN
X
D
OUT
(Note 3)
High-Z
X
In-system
L
H
L
V
ID
(Note 3)
X
X
X
X
X
V
ID
A
IN
SA,A9=V
ID
,
A6=L,
A1=H,A0=L
(Note 3)
(Note 3)
High-Z
Sector protect
A9 High-Volt-
age Method
Sector unprotect
L
V
ID
L
H
(Note 3)
L
V
ID
L
H
SA,A9=V
ID
,
A6=H,
A1=H,A0=L
(Note 3)
High-Z
Legend:
L=Logic Low=V
IL
, H=Logic High=V
IH
, V
ID
=11.5-12.5V, X=Don’t Care, SA=Sector Address, A
IN
=Address In, D
IN
=Data In,
D
OUT
=Data Out
Notes:
1. Addresses are A19:A0 in word mode (BYTE#=V
IH
) , A19:A-1 in byte mode (BYTE#=V
IL
).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Pro-
tection and Unprotection” section.
3. D
IN
or D
OUT
as required by command sequence, data polling, or sector protection algorithm.
Table 2. Autoselect Codes (A9 High-Voltage Method)
A19
to
A12
X
X
Description
CE# OE# WE#
A11
to
A10
X
X
A9
A8
to
A7
X
X
A6
A5
to
A2
X
X
DQ8~DQ15
A1
A0
BYTE# BYTE#
= V
IH
= V
IL
X
22h
X
X
DQ7~DQ0
ManufactureID:ESI
Device ID:
ES29LV160
Sector Protection
Verification
L
L
L
L
H
H
V
ID
V
ID
V
ID
L
L
L
L
L
H
4Ah
C4h(T),49h(B)
01h(protected)
00h(unprotected)
L
L
H
SA
X
X
L
X
H
L
X
X
Legend:
T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=V
IL
, H=Logic High=V
IH
, SA=Sector Address, X = Don’t care
ES29LV160E
10
Rev. 0B January 5 , 2006
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
