E S I
I
ES
ADVANCED INFORMATION
Excel Semiconductor inc.
ES25P40
4Mbit CMOS 3.0 Volt Flash Memory
with 75Mhz SPI Bus Interface
ARCHITECTURAL ADVANTAGES
• Single power supply operation
- 2.7V -3.6V for read and program operations
• Memory Architecture
- Eight sectors with 512 Kb each
• Program
- Page program ( up to 256 bytes) in 1.5ms (typical)
- Program cycles are on a page by page basis
• Erase
- 0.5s typical sector erase time
- 3s typical bulk erase time
• Endurance
-
100,000 cycles per sector (typical)
• Data Retention
-
20 years (typical)
• Parameter Page
-
256 Byte page independent from main memory
for parameter storage
- Seperate from array, erase time < 20ms
• Device ID
- JEDEC standard two-byte electronic signature
- RES instruction one-byte electronic signature for
backward compatibility
- Manufacturer and device type ID
• Process Technology
- Manufactured on 0.18um process technology
• Package Option
- Industry Standard Pinouts
- 8-pin SO (208mil) package
- All Pb-Free devices are RoHS Compliant
PERFORMANCE CHARACTERISTICS
• Speed
-
75Mhz clock rate (maximum)
• Power Saving Standby Mode
-
Standby mode 50uA (max)
-
Deep Power Down Mode 1uA (typical)
MEMORY PROTECTION FEATURES
• Memory Protection
- W# pin works in conjunction with Status Register Bits
to protect specified memory areas
- Status Register Block Protection Bits (BP2, BP1, BP0)
in status register configure parts of memory as read
only
SOFTWARE FEATURES
• SPI Bus Compatible Serial Interface
ES25P40
1
Rev. 0D May 11 , 2006
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
