E S I
I
ES
ADVANCED INFORMATION
Table 3. Instruction Set
Instruction
Description
One-Byte
Instruction Code
Status Register Operations
WREN
WRDI
RDSR
WRSR
Write Enable
Write Disable
Read from Status Register
Write to Status Register
06H (0000 0110)
04H (0000 0100)
05H (0000 0101)
01H (0000 0001)
Read Operations
READ
FAST_READ
RDID
RDMD
RDPARA
FRDPARA
Read Data Bytes
Read Data Bytes at Higher Speed
Read Identification
Read Manufacturer and Device ID
Read Parameter Page
Fast Read Parameter Page
03H (0000 0011)
0BH (0000 1011)
9FH (1001 1111)
90H (1001 0000)
53H (0101 0011)
5BH (0101 1011)
Erase Operations
SE
BE
PE
Sector Erase
Bulk (Chip) Erase
Erase Parameter Page
D8H (1101 1000)
C7H (1100 0111)
D5H (1101 0101)
Program Operations
PP
PPP
Page Program
Program Parameter Page
02H (0000 0010)
52H (0101 0010)
3
3
0
0
1 to 256
1 to 256
3
0
0
0
0
0
0
0
0
3
3
0
0
3
3
0
1
0
3
0
1
1 to Infinity
1 to Infinity
1 to 3
1 to Infinity
1 to Infinity
1 to Infinity
0
0
0
0
0
0
0
0
0
0
1 to Infinity
1
Address
Bytes
Dummy
Byte
Data Bytes
Excel Semiconductor inc.
Deep Power Down Savings Mode Operations
DP
Deep Power Down
Release from Deep Power Down
RES
Release from Deep Power Down and
Read Electronic Signature
B9H (1011 1001)
ABH (1010 1011)
ABH (1010 1011)
0
0
0
0
0
3
0
0
1 to Infinity
ES25P40
10
Rev. 0D May 11 , 2006
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
