KA1L0880B/KA1M0880B
Absolute Maximum Ratings
Parameter
Maximum Drain voltage
(1)
Drain-Gate voltage (R
GS
=1MΩ)
Gate-source (GND) voltage
Drain current pulsed
(2)
Single pulsed avalanche energy
(3)
Avalanche current
(4)
Continuous drain current (T
C
=25°C)
Continuous drain current (T
C
=100°C)
Maximum Supply voltage
Input voltage range
Total power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
D,Max
V
DGR
V
GS
I
DM
E
AS
I
AS
I
D
I
D
V
CC,MAX
V
FB
P
D
Derating
T
A
T
STG
Value
800
800
±30
32.0
810
15
8.0
5.6
30
−0.3
to V
SD
190
1.54
−25
to +85
−55
to +150
Unit
V
V
V
A
DC
mJ
A
A
DC
A
DC
V
V
W
W/°C
°C
°C
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, V
DD
=50V, R
G
=25Ω, starting Tj=25°C
4. L=13µH, starting Tj=25°C
2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
