1N4001-1N4007
Discrete POWER & Signal
Technologies
1N4001 - 1N4007
Features
•
•
Low forward voltage drop.
High surge current capability.
1.0 min (25.4)
Dimensions in
inches (mm)
0.205 (5.21)
0.160 (4.06)
DO-41
COLOR BAND DENOTES CATHODE
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.0 Ampere General Purpose Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
θJA
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
.375 " lead length @ T
A
= 75°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Storage Temperature Range
Operating Junction Temperature
Value
1.0
Units
A
30
2.5
20
50
-55 to +175
-55 to +150
A
W
mW/°C
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
4001
4002
100
70
100
4003
200
140
200
4004
400
280
400
5.0
500
1.1
30
15
4005
600
420
600
4006
800
560
800
4007
1000
700
1000
50
35
50
Units
V
V
V
µA
µA
V
µA
pF
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage
(Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25°C
T
A
= 100°C
Maximum Forward Voltage @ 1.0 A
Maximum Full Load Reverse Current,
Full Cycle
T
A
= 75°C
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
©1998
Fairchild Semiconductor Corporation