1N4151
1N4151
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
75
150
0.5
2.0
-65 to +175
175
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
500
300
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
*
I
R
*
C
T
t
rr1
t
rr2
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Reverse Recovery Time
Test Conditions
I
R
= 5.0
µA
I
F
= 50 mA
V
R
= 50 V
V
R
= 50 V, T
A
= 150°C
V
R
= 0 V , f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100Ω
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100Ω
Min
75
Max
1.0
50
50
2.0
4.0
2.0
Units
V
V
nA
µA
pF
ns
ns
*
Pulse test : Pulse width=300us, Duty Cycle=2%
2004
Fairchild Semiconductor Corporation
1N4151, Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
