1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
March 2008
1N4148WT / 1N4448WT / 1N914BWT
High Conductance Fast Switching Diode
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Fast Switching Diode (Trr <4.0nsec)
Flat Lead, Surface Mount Device under 0.70mm Height
Extremely Small Outline Plastic Package SOD523F
Moisture Level Sensitivity 1
Pb-free Version and RoHS Compliant
Matte Tin (Sn) Lead Finish
Green Mold Compound
Device Marking Code
Device Type Device Marking
1N4148WT
E1
1N4448WT
E2
1N914BWT
E3
SOD-523F
Band Indicates Cathode*
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
RSM
V
RRM
I
FRM
T
J
T
STG
Parameter
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Operating Junction Temperature Range
Storage Temperature Range
Value
75
75
300
-55 to +150
-55 to +150
Units
V
V
mA
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
R
θJA
P
D
Power Dissipation(T
C
=25°C)
Parameter
Thermal Resistance, Junction to Ambient
Value
500
200
Unit
°C/W
mW
*Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
BV
R
I
R
V
F
C
O
T
RR
Parameter
Breakdown Voltage
Reverse Current
1N4448WT/ 914WT
1N4448WT
1N4448WT/ 914WT
Test Conditions
I
R
= 100
μA
I
R
= 5
μA
V
R
= 20 V
V
R
= 75 V
I
F
= 5 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 0, f = 1 MHz
I
F
= 10 mA, V
R
= 6.0 V
I
RR
= 1 mA, R
L
= 100
Ω
Min
100
75
Typ
Max
Units
V
25
5
0.62
0.72
1
1
4
4
nA
μA
V
pF
nS
Forward Voltage
Diode Capacitance
Reverse Recovery Time
© 2007 Fairchild Semiconductor Corporation
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
