GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
4N28
H11A3
4N35
H11A4
4N36
H11A5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
(I
C
= 1.0 mA, I
F
= 0)
(I
C
= 100 µA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
(V
CB
= 10 V)
(V
CE
= 0 V, f = 1 MHz)
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
8
30
70
7
100
120
10
1
50
20
V
V
V
nA
nA
pF
(I
F
= 10 mA)
(V
R
= 6.0 V)
V
F
I
R
1.18
0.001
1.50
10
V
µA
Test Conditions
Symbol
Min
Typ*
Max
Unit
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions Symbol
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec)
(V
I-O
= 500 VDC)
(V
I-O
= &, f = 1 MHz)
(‘-M’ White Package)
V
ISO
R
ISO
C
ISO
Min
5300
7500
10
11
0.5
0.2
2
Typ*
Max
Units
Vac(rms)
Vac(pk)
Ω
pF
pF
Note
* Typical values at T
A
= 25°C
© 2003 Fairchild Semiconductor Corporation
Page 3 of 15
5/7/03
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