KA5X03XX-SERIES
Typical Performance Characteristics
(Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
10
1
V
GS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
10
0
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
0
150
o
C
@
Notes:
1. 300 s Pulse Test
µ
2. T
C
= 25
o
C
10
-1
10
0
10
1
10
-1
2
25
o
C
-25
o
C
@Notes:
1. V
DS
= 30 V
2. 300
µ
s PulseTest
6
8
10
4
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Thansfer Characteristics
8
7
Fig3. On-Resistance vs. Drain Current
10
Drain-Source On-Resistance
6
5
4
3
2
1
0
Vgs=20V
I
DR
, Reverse Drain Current [A]
Vgs=10V
R
DS(on)
, [Ω ]
1
150
o
C
25
o
C
@Note : Tj=25℃
0
1
2
3
4
0.1
0.4
0.6
0.8
@Notes:
1. V
GS
= 0V
2. 300
µ
s Pulse Test
1.0
I
D
,Drain Current
V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
1000
900
800
700
V
GS
,Gate-Source Voltage[V]
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
iss
10
V
DS
=160V
8
V
DS
=400V
V
DS
=640V
6
Capacitance [pF]
600
500
400
300
200
100
0
10
0
4
C
oss
C
rss
10
1
2
@Note : I
D
=3.0A
0
0
5
10
15
20
25
30
V
DS
, Drain-Source Voltage [V]
Q
G
,Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
9
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
