FDW9926A
March 2005
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Features
•
4.5 A, 20 V.
R
DS(ON)
= 32 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 45 mΩ @ V
GS
= 2.5 V
•
Optimized for use in battery circuit applications
•
Extended V
GSS
range (±10V) for battery applications
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Battery protection
•
Load switch
•
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Total Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±12
(Note 1a)
Units
V
V
A
W
°C
4.5
30
1.0
0.6
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
125
208
°C/W
Package Marking and Ordering Information
Device Marking
9926A
Device
FDW9926A
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
©2005
Fairchild Semiconductor Corporation
FDW9926A Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
