BD434/436/438
BD434/436/438
Medium Power Linear and Switching
Applications
• Complement to BD433, BD435 and BD437 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD434
: BD436
: BD438
V
CES
Collector-Emitter Voltage
: BD434
: BD436
: BD438
Collector-Emitter Voltage
: BD434
: BD436
: BD438
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
- 22
- 32
- 45
- 22
- 32
- 45
- 22
- 32
- 45
-5
-4
-7
-1
36
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
