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E13009L PDF Datasheet浏览和下载

型号.:
E13009L
PDF下载:
下载PDF文件
内容描述:
高压开关模式的应用
[High Voltage Switch Mode Applications]
文件大小:
47 K
文件页数:
4 Pages
品牌Logo:
品牌名称:
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
PCB Prototype
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  • IC型号
  • 厂家
  • 批号
  • 数量
  • 封装
  • 单价/备注
  • 操作
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KSE13009L
KSE13009L
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
12
24
6
130
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Test Condition
I
C
= 10mA, I
B
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 8A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
=125V, I
C
= 8A
I
B1
= - I
B2
= 1.6A
R
L
= 15,6Ω
4
1.1
3
0.7
180
8
6
Min.
400
Typ.
Max.
1
40
30
1
1.5
3
1.2
1.6
V
V
V
V
V
pF
MHz
µs
µs
µs
Units
V
mA
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2% Pulse
©2000 Fairchild Semiconductor International
Rev. A, February 2000