June 1999
FDC638P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
This P -Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
These devices are well suited for battery power applications: load
switching and power management, battery charging circuits, and
DC/DC conversion.
Features
-4.5 A, -20 V. R
DS(ON)
= 0.045
Ω
@ V
GS
= -4.5 V
R
DS(ON)
= 0.065
Ω
@ V
GS
= -2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low R
DS(ON)
.
SuperSOT -6 package: small footprint (72% smaller than standard
SO-8); low profile (1mm thick).
TM
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
S
D
D
1
6
.63
pin
1
8
2
G
D
D
5
SuperSOT
TM
-6
3
4
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
GSS
I
D
Drain-Source Voltage
T
A
= 25°C unless otherwise note
Ratings
-20
±8
(Note 1a)
Units
V
V
A
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
-4.5
-20
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
0.8
-55 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
©1999 Fairchild Semiconductor
FDC638P Rev.D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
